elektronische bauelemente SST3585 3.5a, 20v, r ds(on) 75m ?? -2.5a, -20v, r ds(on) 160m ?? n and p-channel enhancement mode power mosfet 03-jan-2012 rev. g page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. 3 5 8 5 ????? ?? ? = date code top view rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SST3585 provide the designer with best combination of fast switching, low on-res istance and cost effectiveness. the sot-26 package is universally used for all commercial-industrial surface mount applications. features ? low gate charge ? low on-resistance marking code package information absolute maximum ratings (t a = 25 c unless otherwise specified) ratings parameter symbol n-channel p-channel unit drain-source voltage v ds 20 -20 v gate-source voltage v gs 12 12 v t a = 25c 3.5 -2.5 continuous drain current 3 t a = 70c i d 2.8 -1.97 a pulsed drain current 1 i dm 10 -10 a power dissipation p d 1.14 w maximum junction to ambient 3 r ja 110 c / w linear derating factor 0.01 w / c operating junction & stor age temperature range t j , t stg -55~150 c package mpq leader size sot-26 3k 7 inch sot-26 a h e f l g j k c d b millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0.37 ref. b 2.60 3.00 h 0.30 0.55 c 1.20 ref. j - - d 1.40 1.80 k 0.12 ref. e 0.95 ref. l - 0.10 f 0.60 ref.
elektronische bauelemente SST3585 3.5a, 20v, r ds(on) 75m ?? -2.5a, -20v, r ds(on) 160m ?? n and p-channel enhancement mode power mosfet 03-jan-2012 rev. g page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) paramete r s y mbol min. t yp . max. unit test conditions static n-ch 20 - - v gs =0, i d =250 a drain-source breakdown voltage p-ch bv dss -20 - - v v gs =0, i d = -250 a n-ch - 0.02 - reference to 25c, id=1ma breakdown voltage temp. coefficient p-ch bv dss / t j - -0.01 - v/c reference to 25c, id= -1ma n-ch 0.5 - 1.2 v ds =v gs , i d =250 a gate-threshold voltage p-ch v gs(th) - - -1.2 v v ds =v gs , i d = -250 a n-ch - 7 - v ds =5v, i d =3a forward transconductance p-ch g fs - 4 - s v ds = -5v, i d = -2a n-ch - - 100 v gs = 12v gate-source leakage current p-ch i gss - - 100 na v gs = 12v n-ch - - 1 v ds =20 v, v gs =0 p-ch - - -1 v ds = -20 v, v gs =0 n-ch - - 10 v ds =16v, v gs =0 drain-source leakage current p-ch i dss - - -25 a v ds = -16v, v gs =0 n-ch - - 75 v gs =4.5v, i d =3.5a p-ch - - 160 v gs = -4.5v, i d = -2.5a n-ch - - 125 v gs =2.5v, i d =1.2a drain-source on-resistance 1 p-ch r ds(on) - - 300 m ? v gs = -2.5v, i d = -2a n-ch - 4 7 total gate charge 1 p-ch q g - 5 8 n-ch - 0.7 - gate-source charge p-ch q gs - 1 - n-ch - 2 - gate-drain charge p-ch q gd - 2 - nc n-channel v ds =16v, v gs =4.5v, i d =3a p-channel v ds = -16v, v gs = -4.5v, i d = -2a n-ch - 6 - turn-on delay time 1 p-ch t d(on) - 6 - n-ch - 8 - rise time p-ch t r - 17 - n-ch - 10 - turn-off delay time p-ch t d(off) - 16 - n-ch - 3 - fall time p-ch t f - 5 - ns n-channel v ds =15v, r g =3.3 ? ,r d =15 ? v gs =5v, i d =1a p-channel v ds = -10v, r g =3.3 ? ,r d =10 ? v gs = -10v, i d = -1a n-ch - 430 520 input capacitance p-ch c iss - 630 750 n-ch - 55 - output capacitance p-ch c oss - 50 - n-ch - 40 - reverse transfer capacitance p-ch c rss - 40 - pf n-channel v gs =0, v ds =20v, f=1.0mhz p-channel v gs =0, v ds = -20v, f=1.0mhz n-ch - 1.4 1.7 gate resistance p-ch r g - 7 10 ? f=1.0mhz
elektronische bauelemente SST3585 3.5a, 20v, r ds(on) 75m ?? -2.5a, -20v, r ds(on) 160m ?? n and p-channel enhancement mode power mosfet 03-jan-2012 rev. g page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions source-drain diode n-ch - - 1.2 i s =1.2a, v gs =0 forward on voltage 1 p-ch v sd - - -1.2 v i s = -1.2a, v gs =0 n-ch - 16 - i s =3a, v gs =0 ,di/dt=100a/ s reverse recovery time p-ch t rr - 20 - ns i s = -2a, v gs =0 ,di/dt=100a/ s n-ch - 8 - i s =3a, v gs =0 ,di/dt=100a/ s reverse recovery charge p-ch q rr - 15 - nc i s = -2a, v gs =0 ,di/dt=100a/ s notes: 1 pulse width limited by max. junction temperature. 2 pulse width Q 300 s, duty cycle Q 2%. 3 surface mounted on 1 in 2 copper pad of fr4 board; t Q 5 sec. 180c/w when mounted on min. copper pad.
elektronische bauelemente SST3585 3.5a, 20v, r ds(on) 75m ?? -2.5a, -20v, r ds(on) 160m ?? n and p-channel enhancement mode power mosfet 03-jan-2012 rev. g page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics cu rve (n-channel)
elektronische bauelemente SST3585 3.5a, 20v, r ds(on) 75m ?? -2.5a, -20v, r ds(on) 160m ?? n and p-channel enhancement mode power mosfet 03-jan-2012 rev. g page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics cu rve (n-channel)
elektronische bauelemente SST3585 3.5a, 20v, r ds(on) 75m ?? -2.5a, -20v, r ds(on) 160m ?? n and p-channel enhancement mode power mosfet 03-jan-2012 rev. g page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve (p-channel)
elektronische bauelemente SST3585 3.5a, 20v, r ds(on) 75m ?? -2.5a, -20v, r ds(on) 160m ?? n and p-channel enhancement mode power mosfet 03-jan-2012 rev. g page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve (p-channel)
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